Defect energy levels in HfO2 high-dielectric-constant gate oxide
نویسندگان
چکیده
منابع مشابه
AlN/GaN insulated gate HEMTs with HfO2 gate dielectric
AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...
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We have investigated the characteristics of thermally evaporated hafnium oxide HfO2 films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. The presence of crystalline GeO2 was evident from X-ray diffraction results on as-deposited films. Capacitance–voltage C-V and current–voltage I-V measurements of the asdeposited metal-oxide semiconduct...
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Effect of surface preparation on the radiation hardness of MOS devices with high dielectric constant gate dielectric of HfO2 and metal gate of TiN is studied using extreme ultra-violet (EUV) light as the radiation source. Three kinds of surface treatment including HF-last, chemical-oxidation, and rapid-thermal-oxidation were evaluated. Among them, chemical-oxidation exhibits the best radiation ...
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Optical conductivity measurements on the perovskite-related oxide CaCu3Ti4O12 provide a hint of the physics underlying the observed giant dielectric effect in this material. A low-frequency vibration displays anomalous behavior, implying that there is a redistribution of charge within the unit cell at low temperature. At infrared frequencies (terahertz), the value for the dielectric constant is...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2005
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2119425